Skip to main content
SpringerLink
Log in

Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We used x-ray diffraction and transmission electron microscopy to study the mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates by the two-step growth technique. Lattice misfit strain associated with Ge/Si(001)Si mismatched epitaxy is largely relieved by a network of Lomer edge misfit dislocations during the first step of growth. However, thermal misfit strain during growth is relieved primarily by interdiffusion at the Si/Ge heterointerface. Two SiGe compositions containing 0.5 at.% and 6.0 at.% Si detected at the interface relieve thermal mismatch strain associated with the two growth steps. A thermodynamic model has been proposed to explain the state of strain in the films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Asai, H. Ueba, and C. Tatsuyama, J. Appl. Phys. 58, 2577 (1985).

    Article  Google Scholar 

  2. J.M. Baribeau, T.E. Jackman, D.C. Houghton, P. Maigne, and M.W. Denhoff, J. Appl. Phys. 63, 5738 (1988).

    Article  Google Scholar 

  3. L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L.D. Gaspare, and F. Evangelisti, Solid State Phenom. 54, 55 (1997).

    Article  Google Scholar 

  4. M. Halbwax, D. Bouchier, V. Yam, D. Débarre, L.H. Nguyen, Y. Zheng, P. Rosner, M. Benamara, H.P. Strunk, and C. Clerc, J. Appl. Phys. 97, 064907 (2005).

    Article  Google Scholar 

  5. H.-C. Luan, D.R. Lim, K.K. Lee, K.M. Chen, J.G. Sandland, K. Wada, and L.C. Kimerling, Appl. Phys. Lett. 75, 2909 (1999).

    Article  Google Scholar 

  6. J.M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J.M. Fedeli, M. Rouviere, L. Vivien, and S. Laval, J. Appl. Phys. 95, 5905 (2004).

    Article  Google Scholar 

  7. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 32, 265 (1976).

    Article  Google Scholar 

  8. D.J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).

    Article  Google Scholar 

  9. J. Narayan, S. Sharan, A.R. Srivatsa, and A.S. Nandedkar, Mater. Sci. Eng. B 1, 105 (1988).

    Article  Google Scholar 

  10. J. Narayan and S. Sharan, J. Appl. Phys. 66, 2376 (1989).

    Article  Google Scholar 

  11. J. Narayan, Acta Mater. 61, 2703 (2013).

    Article  Google Scholar 

  12. S. Oktyabrsky and J. Narayan, Philos. Mag. A 72, 305 (1995).

    Article  Google Scholar 

  13. L. Colace, G. Masini, G. Assanto, H.-C. Luan, K. Wada, and L.C. Kimerling, Appl. Phys. Lett. 75, 2909 (1999).

    Article  Google Scholar 

  14. I.C. Noyan and J.B. Cohen, Residual Stress Measurement by Diffraction and Measurement, 1987 (New York: Springer, 1987).

    Google Scholar 

  15. J.J. Wortman and R.A. Evans, J. Appl. Phys. 36, 153 (1965).

    Article  Google Scholar 

  16. J. Bharathan, J. Narayan, G. Rozgonyi, and G. Bulman, J. Electron. Mater. 42, 40 (2013).

    Article  Google Scholar 

  17. H.P. Singh, Acta Crystallogr. Sect. A 24, 469 (1968).

    Article  Google Scholar 

  18. Y. Okada and Y. Tokamaru, J. Appl. Phys. 56, 314 (1984).

    Article  Google Scholar 

  19. S. Oktyabrsky, H. Wu, R.D. Vispute, and J. Narayan, Philos. Mag. A 71, 537 (1995).

    Article  Google Scholar 

  20. S. Lopatin, S.J. Pennycook, J. Narayan, and G. Duscher, Appl. Phys. Lett. 81, 2728 (2002).

    Article  Google Scholar 

  21. K. Jagannadham and J. Narayan, Mater. Sci. Eng. B 8, 107 (1991).

    Article  Google Scholar 

  22. D.E. Jesson, S.J. Pennycook, J.M. Baribeau, and D.C. Houghton, Phys. Rev. Lett. 71, 1744 (1993).

    Article  Google Scholar 

  23. J.P. Hirthe and J. Lothe, Theory of Dislocations (New York: Wiley, 1982).

    Google Scholar 

  24. M. Ichimura and J. Narayan, Philos. Mag. A 72, 281 (1995).

    Article  Google Scholar 

  25. M. Ichimura and J. Narayan, Philos. Mag. A 72, 297 (1995).

    Article  Google Scholar 

  26. D.D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D.T. Danielson, S. Jongthammanurak, J. Michel, and L.C. Kimerling, Appl. Phys. Lett. 84, 906 (2004).

    Article  Google Scholar 

  27. J.W. Mathews, Epitaxial growth Part B (New York: Academic Press, 1975).

    Google Scholar 

  28. A.T. Fiory, J.C. Bean, L.C. Feldman, and I.K. Robinson, J. Appl. Phys. 56, 1227 (1984).

    Article  Google Scholar 

  29. J. Raisanen, J. Hirvonen, and A. Anttila, Solid-State Electron. 24, 333 (1981).

    Article  Google Scholar 

  30. J.P. Dismukes, L. Ekstrom, and R.J. Paff, J. Phys. Chem. 68, 3021 (1964).

    Article  Google Scholar 

  31. T.B. Massalski, Binary Alloy Phase Diagrams (Materials Park, OH: ASM Information Society, 1986).

    Google Scholar 

  32. D.B. Williams and C.B. Carter, Transmission Electron Microscopy: A Textbook for Materials Science (New York: Plenum Press, 1996).

    Book  Google Scholar 

Download references

Acknowledgements

We would like to thank Oak Ridge National Laboratory, Tennessee, for their assistance in acquiring the Z-contrast STEM images. The authors would like to thank Dr. Bruce Cook and Jonathan Pierce from RTI International for their feedback. We thank Dr. Rama Venkatasubramanian for his views on this research. This work was supported by RTI International.

Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA

    Jayesh Bharathan, Jagdish Narayan & George Rozgonyi

  2. Fredrick Seitz Materials Research Laboratory, Urbana, IL, 61801, USA

    Honghui Zhou

  3. Engineering and Applied Physics Division, RTI International, Durham, NC, 27709, USA

    Jayesh Bharathan & Gary E. Bulman

Authors
  1. Jayesh Bharathan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Honghui Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jagdish Narayan
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. George Rozgonyi
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Gary E. Bulman
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jayesh Bharathan.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Bharathan, J., Zhou, H., Narayan, J. et al. Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures. J. Electron. Mater. 43, 3196–3203 (2014). https://doi.org/10.1007/s11664-014-3247-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3247-6

Keywords

Search

Navigation