Abstract
The InGaZnO channel layer of bottom-gate-type flexible transparent thin-film transistors was deposited on polyethylene terephthalate substrates using a magnetron radio frequency cosputter system with a single InGaZnO target. The composition of the InGaZnO channel layer was controlled by sputtering at various Ar/O2 gas ratios. A 15-nm-thick SiO y insulator film was used to passivate the InGaZnO channel layer. Much better performances of the passivated devices were obtained, which verified the passivation function. To study the bending stability of the resulting flexible transparent thin-film transistors, a stress test with a bending radius of 1.17 cm for 1,500 s was carried out, which showed a variation in the effective filed-effect mobility and the threshold voltage of the unpassivated and passivated devices being maintained within 10 and 8%, respectively.
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Acknowledgement
This work was supported from the ChiMei Innolux Corporation and the National Science Council of Taiwan, Republic of China under NSC-99-2221-E006-106-MY3, NSC-101-2628-E-006-017-MY3, and 982C05, and the Advanced Optoelectronic Technology Center of the National Cheng Kung University.
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Lee, HY., Ye, WY., Lin, YH. et al. High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature. J. Electron. Mater. 43, 780–785 (2014). https://doi.org/10.1007/s11664-013-2957-5
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DOI: https://doi.org/10.1007/s11664-013-2957-5