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Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films

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Abstract

V-doped and undoped SrTiO3 (V:STO and STO) thin films on Pt/Ti/SiO2/Si substrates were synthesized using a sol–gel method to form metal–insulator–metal (MIM) structures. Coexistence of the bipolar and unipolar resistive switching (BRS and URS) modes in Pt/STO/Pt and Pt/V:STO/Pt structures was observed as a irreversible transition from BRS to URS on adjustment of the compliance current (I comp). Both states were stable and reproducible over 60 cycles, and the maximum operating voltage of the Pt/STO/Pt was reduced from 10 V to 2 V by doping with V. Linear fitting of current–voltage curves suggests that space-charge-limited leakage was the limiting leakage mechanism for these two devices. Based on these results, a switching mechanism based on filament theory is proposed to explain both resistive switching modes.

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Authors and Affiliations

  1. Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan, 411105, China

    Zhen Hua Tang, Ding Lin Xu, Ming Hua Tang, Zi Ping Wang, Yong Guang Xiao & Bo Wen Zeng

  2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan, 411105, China

    Ying Xiong

  3. ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan, 410073, China

    Xiao Chen Gu & Jian Cheng Li

  4. College of Electrical and Electronic Engineering, Wuhan Institute of Technology, 693 Xiongchu Avenue, Wuhan, 430073, China

    Long Hai Wang

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  1. Zhen Hua Tang
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Correspondence to Ming Hua Tang.

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Tang, Z.H., Xiong, Y., Xu, D.L. et al. Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films. J. Electron. Mater. 42, 2510–2515 (2013). https://doi.org/10.1007/s11664-013-2600-5

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  • DOI: https://doi.org/10.1007/s11664-013-2600-5

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