Abstract
Growth of GaN boules by hydride vapor-phase epitaxy (HVPE) is very attractive for fabrication of GaN substrates. Use of dichlorosilane as a source for Si doping of bulk GaN is investigated. It is shown that no tensile strain is incorporated into mm-thick, Si-doped GaN layers on sapphire substrates if the threading dislocation density is previously reduced to 2.5 × 107 cm−2 or below. High-quality GaN layers with electron densities up to 1.5 × 1019 cm−3 have been achieved, and an upper limit of about 4 × 1019 cm−3 for Si doping of GaN boules was deduced considering the evolution of dislocations with thickness. A 2-inch, Si-doped GaN crystal with length exceeding 6 mm and targeted Si doping of about 1 × 1018 cm−3 is demonstrated.
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R.M. Farrell, E.C. Young, F. Wu, S.P. DenBaars, and J.S. Speck, Semicond. Sci. Technol. 27, 024001 (2012).
K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao, J. Cryst. Growth 311, 3011 (2009).
K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, and I. Fujimura, Phys. Stat. Sol. (a) 205, 1056 (2008).
G.S. Sudhir, Y. Peyrot, J. Krüger, Y. Kim, R. Klockenbrink, C. Kiesielowski, M.D. Rubin, E.R. Weber, W. Kriegseis, and B.K. Meyer, Mater. Res. Soc. Symp. Proc. 482, 525 (1998).
A. Cremades, L. Görgens, O. Ambacher, M. Stutzmann, and F. Scholz, Phys. Rev. B 61, 2812 (2000).
L.T. Romano, C.G. Van de Walle, J.W. Ager III, W. Götz, and R.S. Kern, J. Appl. Phys. 87, 7745 (2000).
C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Lilienthal-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Phys. Rev. B 54, 17745 (1996).
A.E. Romanov and J.S. Speck, Appl. Phys. Lett. 83, 2569 (2003).
A. Dadgar, P. Veit, F. Schulze, J. Bläsing, A. Krtschil, H. Witte, A. Diez, T. Hempel, J. Christen, R. Clos, and A. Krost, Thin Solid Films 515, 4356 (2007).
D.M. Follstaedt, S.R. Lee, A.A. Alleman, and J.A. Floro, J. Appl. Phys. 105, 083507 (2009).
A. Dadgar, J. Bläsing, A. Diez, and A. Krost, Appl. Phys. Express 4, 011001 (2011).
J. Xie, S. Mita, L. Hussey, A. Rice, J. Tweedie, J. LeBeau, R. Collazo, and Z. Sitar, Appl. Phys. Lett. 99, 141916 (2011).
A.V. Fomin, A.E. Nikolaev, I.P. Nikitina, A.S. Zubrilov, M.G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B. Ja, and D.V. Ber Tsvetkov, Phys. Stat. Sol. (a) 188, 433 (2001).
A. Usui, M. Shibata, Y. Oshima, Patent US6924159 (2005) 20.
E. Richter, Ch. Hennig, U. Zeimer, L. Wang, M. Weyers, and G. Tränkle, Phys. Stat. Sol. (a) 203, 1658 (2006).
Y. Oshima, T. Yoshida, K. Watanabe, and T. Mishima, J. Cryst. Growth 312, 3569 (2010).
E. Richter, M. Gründer, B. Schineller, F. Brunner, U. Zeimer, C. Netzel, M. Weyers, and G. Tränkle, Phys. Stat. Sol. (c) 8, 1450 (2011).
B. Schineller, J. Kaeppeler, and M. Heuken, CS MANTECH Conference, May 14–17, 2007, Austin, Texas, USA, www.csmantech.org/Digests/2007/2007Papers/07a.pdf
M.A. Moram and M.E. Vickers, Rep. Prog. Phys. 72, 036502 (2009).
J.H. You, J.-Q. Lu, and H.T. Johnson, J. Appl. Phys. 99, 033706 (2006).
J.W. Orton and C.T. Foxon, Semicond. Sci. Technol. 13, 310 (1998).
J.K. Sheu and G.C. Chi, J. Phys.: Condens. Matter 14, R657 (2002).
V. Darakchieva, B. Monemar, A. Usui, M. Saenger, and M. Schubert, J. Cryst. Growth 310, 959 (2008).
H. Harima, H. Sakashita, and S. Nakashima, Mater. Sci. For. 264–268, 1363–1366 (1998).
M. Kuball, Surf. Interface Anal. 31, 987 (2001).
S.K. Mathis, A.E. Romanov, L.F. Chen, G.E. Beltz, W. Pompe, and J.S. Speck, Phys. Stat. Sol. A 179, 125 (2000).
E. Richter, M. Gründer, C. Netzel, M. Weyers, and G. Tränkle, J. Cryst. Growth 350, 89 (2012).
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Richter, E., Stoica, T., Zeimer, U. et al. Si Doping of GaN in Hydride Vapor-Phase Epitaxy. J. Electron. Mater. 42, 820–825 (2013). https://doi.org/10.1007/s11664-012-2373-2
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DOI: https://doi.org/10.1007/s11664-012-2373-2