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Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

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Resistive switching (RS) characteristics are investigated in fabricated Al-doped HfO2 metal–insulator–metal devices. It is proposed that oxygen vacancies in Al-doped HfO2 devices play a key role as electron trap centers, leading to the forming-free reversible bipolar resistance switching behavior. The conduction mechanism can be explained by electron trapping and detrapping from such oxygen vacancy-related traps in the Al-doped HfO2 films and is dominated by a trap-controlled space-charge-limited current (SCLC) mechanism. A large RS ratio (~106) and excellent retention characteristics are also observed at room temperature as well as at 85°C. Such devices have potential for application in nonvolatile random-access memory.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Durgapur, 713 209, India

    R. Mahapatra

  2. School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle Upon Tyne, NE1 7RU, UK

    A. B. Horsfall & N.G. Wright

Authors
  1. R. Mahapatra
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  2. A. B. Horsfall
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  3. N.G. Wright
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Correspondence to R. Mahapatra.

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Mahapatra, R., Horsfall, A.B. & Wright, N. Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices. J. Electron. Mater. 41, 656–659 (2012). https://doi.org/10.1007/s11664-012-1912-1

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  • DOI: https://doi.org/10.1007/s11664-012-1912-1

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