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A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

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A back-illuminated vertical-structure ZnO ultraviolet (UV) detector was fabricated using an indium-tin oxide (ITO) electrode. Ordered ITO and ZnO films were grown on a quartz substrate by radiofrequency sputtering. At 5 V bias, the dark current was 640 μA and the photocurrent was 16.8 mA under UV illumination (365 nm, 10 μW), indicating a high responsivity of 1616 A/W. The response time measurements showed a rise time of 71.2 ns and a decay time of 377 μs. The ZnO detector performed well and can be used in a focal-plane array for UV image detection.

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Acknowledgements

This work is supported by Project 985 and 211 of Xi`an Jiaotong University and Doctor fund of Ministry of Education No. 20030698008.

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Authors and Affiliations

  1. Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an, 710049, China

    Zhen Bi, Xiaodong Yang, Jingwen Zhang, Xuming Bian, Dong Wang, Xinan Zhang & Xun Hou

  2. School of Science, Xidian University, Xi’an, 710071, China

    Zhen Bi

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  1. Zhen Bi
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  2. Xiaodong Yang
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  4. Xuming Bian
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  5. Dong Wang
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  7. Xun Hou
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Correspondence to Zhen Bi.

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Bi, Z., Yang, X., Zhang, J. et al. A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film. J. Electron. Mater. 38, 609–612 (2009). https://doi.org/10.1007/s11664-008-0601-6

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  • DOI: https://doi.org/10.1007/s11664-008-0601-6

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