We report on the growth and characterization of high-quality GaN nanowires for hydrogen sensors. We grew the GaN nanowires by catalytic chemical vapor deposition (CVD) using gold thin films as a catalyst on a Si wafer with an insulating SiO2 layer. Structural characterization of the as-grown nanowires by several methods shows that the nanowires are single-crystal wurtzite GaN.␣Photoluminescence measurements under 325 nm excitation show a near-band-edge emission peak around ∼3.4 eV. The hydrogen sensors are fabricated by contacting the as-grown GaN nanowires by source and drain electrodes and coating them with a thin layer of Pd. Hydrogen sensing experiments using the fabricated devices show high sensitivity response (ppm detection limit at room temperature) and excellent recovery. This work opens up the possibility of using high-quality GaN nanowire networks for hydrogen sensing applications.
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Acknowledgements
The authors would like to thank Kerry Siebein and the staff at the Major Analytical Instrumentation Center (MAIC) at the University of Florida for their assistance with TEM and XRD. This work was␣funded in part by NSF (CTS-0301178 and DMR070416) and ARO (J.M. Zavada). Jason L. Johnson acknowledges support from the NSF South East Alliance for Graduate Education and the Professoriate (SEAGAP) Award, and the National Consortium for Graduate Degrees for Minorities in Engineering and Science (GEM) Fellowship.
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Johnson, J.L., Choi, Y., Ural, A. et al. Growth and Characterization of GaN Nanowires for Hydrogen Sensors. J. Electron. Mater. 38, 490–494 (2009). https://doi.org/10.1007/s11664-008-0596-z
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DOI: https://doi.org/10.1007/s11664-008-0596-z