Abstract
InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNx mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.
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Zhang, X., Dapkus, P.D., Rich, D.H. et al. InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN. J. Electron. Mater. 29, 10–14 (2000). https://doi.org/10.1007/s11664-000-0086-4
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DOI: https://doi.org/10.1007/s11664-000-0086-4