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Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum

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Abstract

The wafer design of a widely tunable InGaAs/GaAs quantum wells vertical-external-cavity surface-emitting laser (VECSEL) at 1,064 nm was presented. A GaAs/AlAs based double-band mirror (DBM) was employed to yield sufficient reflectivity (\(>\)0.999) over 118 nm wavelength coverage, which is 54 nm wider than that of a usually used distributed Bragg reflector. In the active region, an antiresonant subcavity, formed by the DBM and the air-semiconductor interface, was introduced to produce extended longitudinal confinement factor, and two kinds of InGaAs quantum wells with different In composition were used to expand the material gain. As a result, a broadband gain spectrum of the semiconductor wafer with 85 nm FWHM bandwidth was obtained, and this was valuable for broadband performance of a tunable VECSEL.

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Acknowledgments

This work is supported by the Natural Science Foundation of Chongqing (cstcjjA40029) and the Scientific and Technological Research Program of Chongqing Municipal Education Commission (KJ130630).

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Correspondence to Peng Zhang.

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Zhang, P., Jiang, M., Men, Y. et al. Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum. Opt Quant Electron 47, 423–431 (2015). https://doi.org/10.1007/s11082-014-9924-0

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  • DOI: https://doi.org/10.1007/s11082-014-9924-0

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