Abstract
In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier height (0.72 and 0.71 eV) and series resistance (33 and 153 \(\Omega \)) were evaluated from I–V data. The comparison of the performance of the two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs have been analyzed and discussed.
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Baliga, B.J.: Modern Power Devices. Wiley, New York (1987)
Cao, Y., Jena, D.: High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions. Appl. Phys. Lett. 90(18), 112–182 (2007)
Card, H.C., Rhodes, E.H.: Studies of tunnel MOS diodes II. Thermal equilibrium considerations. J. Appl. Phys. D4, 1602 (1971)
Charfeddine, M., Gassoumi, M., Mosbahi, H., Gaquiére, C., Zaidi, M.A., Maaref, M.: Electrical characterization of traps in AlGaN/GaN FAT-HEMT’s on silicon substrate by C-V and DLTS measurements. J. Mod. Phys. 2, 1229–1234 (2011)
Charfeddine, M., Belambrouk, H., Zaid, M.A., Maaref, H.: 2-D theoretical model for current-voltage characteristics in AlGaN/GaN HEMT’s. J. Mod. Phys. 3(12), 881–886 (2012)
Chini, A., Esposto, M., Meneghesso, G., Zanoni, E.: Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements. Electron. Lett 45(8), 426–427 (2009)
Gadanecz, A., Bläsing, J., Dadgar, A., Hums, C., Krost, A.: Thermal stability of metal organic vapor phase epitaxy grown AlInN. Appl. Phys. Lett. 90, 221906 (2007)
Higashiwaki, M., Mimura, T., Matsui, T.: AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current gain cutoff frequency of 190 GHz. Appl. Phys. Express 1(2), 021103 (2008a)
Higashiwaki, M., Mimura, T., Matsui, T.: Millimeter-wave GaN HFET technology. Proc. SPIE 6894(1), 68941L (2008)
Kuzmik, J.: Power electronics on InAlN/(In)GaN: prospect for a record performance. IEEE Electron Device Lett. 22(11), 510–512 (2001)
Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.F., Georgakilas, A., Pogany, D.: InAlN/GaN HEMTs: a first insight into technological optimization. IEEE Trans. Electron Devices 53, 422 (2006)
Kuzmik, J., Pozzovivo, G., Ostermaier, C., Strasser, G., Pogany, D., Gornik, E., Carlin, J.F., Gonschorek, M., Feltin, E., Grandjean, N.: Analysis of degradation mechanisms in lattice- matched InAlN/GaN high-electron mobility transistors. J. Appl. Phys. 106(12), 124503 (2009)
Medjdoub, F., Alomari, M., Carlin, J.F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., Kohn, E.: Barrier-layer scaling of InAlN/ GaN HEMTs. J. IEEE Electron Device Lett. 29(5), 422–425 (2008)
Medjdoub, F., Carlin, J.F., Gaquière, C., Grandjean, N., Kohn, E.: Status of the emerging InAlN/GaN power HEMT technology. J. Open Electr. Electron. Eng. 2(1), 1–7 (2008)
Padovani, F.A., Straton, R.: Field and thermionic-field emission in Schottky barriers. Solid Stat. Electron 9, 695 (1966)
Park, S.Y., Floresca, C., Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Kim, M.J.: Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectron. Reliab. 49(5), 478–483 (2009)
Rhoderick, E.H.: Metal-Semiconducteur Contacts. University Press, Oxford (1988)
Sze, S.E.: Physics of Semiconductor Devices. Wiley, New York (1981)
Tasli, P., Sarikavak, B., Atmaca, G., Elibo, K., Kuloglu, A.F., Lisesivdin, S.B.: Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: effect of indium-mole fraction, doping and layer thicknesses. Phys. B 405, 4020–4026 (2010)
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Benyahya, N., Mazari, H., Benseddik, N. et al. Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN. Opt Quant Electron 46, 209–219 (2014). https://doi.org/10.1007/s11082-013-9747-4
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DOI: https://doi.org/10.1007/s11082-013-9747-4