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InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

  • Special Issue: Nanostructured Materials 2010
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Abstract

In this article, comprehensive combination of photomodulated optical spectroscopy (PR) and temperature-dependent photoluminescence (PL) is carried out to investigate the electronic energy levels and carrier dynamics in nanometers’ size InAs quantum dots (QDs) in different surrounding material. Depending on the temperature range, the integrated PL intensity as a function of temperature, correlated to a rate equation model reveals two thermal escape channels for the InAs QDs in a pure GaAs matrix and three thermal escape channels for InAs/InGaAs dots-in-a-well structure. The extraction of the electronic energy levels by room temperature PR allow analyzing the impact of the surrounding material composition on the thermal activation energies and resulting PL quenching process.

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Authors and Affiliations

  1. Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences, Université de Monastir, Avenue de l’Environnement, 5019, Monastir, Tunisia

    M. H. Hadj Alouane, B. Ilahi, L. Sfaxi & H. Maaref

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  1. M. H. Hadj Alouane
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  2. B. Ilahi
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  3. L. Sfaxi
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  4. H. Maaref
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Correspondence to B. Ilahi.

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Hadj Alouane, M.H., Ilahi, B., Sfaxi, L. et al. InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic. J Nanopart Res 13, 5809–5813 (2011). https://doi.org/10.1007/s11051-011-0349-4

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  • DOI: https://doi.org/10.1007/s11051-011-0349-4

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