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Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

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Abstract

GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal–organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching technique. The X-ray diffraction indicated that the full width at half maximum values of (0002) and (\(10\overline{1}2\)) diffraction peaks in the GaN epilayer grown on the new PSS were evidently smaller than that in the GaN epilayer grown on the normal treated PSS. The improvement of GaN quality was attributed to the reduction of threading dislocations (TDs) in GaN epilayer, and the mechanism of the reduction of TDs was analyzed. The influence of the new PSS on the optical properties as well as the residual stress in GaN epilayer was also discussed.

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Acknowledgments

This work was supported by national natural science foundation of china (Nos. 61223005, 61076045, 11004020), national high technology research and development program (863 program) (No. 2011AA03A102), the fundamental research funds for the central universities (Nos. DUT12LK22, DUT11LK43, DUT11RC (3) 45, DUT13RC205), the research fund for the doctoral program of higher education (No. 20110041120045), the open fund of the state key laboratory of functional materials for informatics.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, China

    Dechao Yang & Guotong Du

  2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China

    Hongwei Liang, Yu Qiu, Rensheng Shen, Yang Liu, Xiaochuan Xia, Shiwei Song, Kexiong Zhang & Guotong Du

  3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China

    Hongwei Liang

  4. Zhejiang Crystal-Optech Co., Ltd., Taizhou, 318015, China

    Zhennan Yu

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  1. Dechao Yang
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  2. Hongwei Liang
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  3. Yu Qiu
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Correspondence to Hongwei Liang or Guotong Du.

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Yang, D., Liang, H., Qiu, Y. et al. Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate. J Mater Sci: Mater Electron 25, 267–272 (2014). https://doi.org/10.1007/s10854-013-1582-7

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  • DOI: https://doi.org/10.1007/s10854-013-1582-7

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