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Growth of CZTS thin films by sulfurization of sputtered single-layered Cu–Zn–Sn metallic precursors from an alloy target

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Abstract

Cu2ZnSnS4 (CZTS) thin films were prepared by sulfurizing single-layered metallic Cu–Zn–Sn precursors which were deposited by DC magnetron sputtering using a Cu–Zn–Sn ternary alloy target. The composition, microstructure and properties of the CZTS thin films prepared under different sputtering pressure and DC power were investigated. The results showed that the sputtering rate of Cu atom increases as the sputtering pressure and DC power increased. The microstructure of CZTS thin films can be optimized by sputtering pressure and DC power. The CZTS thin film prepared under 1 Pa and 30 W showed a pure Kesterite phase and a dense micro-structure. The direct optical band gap of this CZTS thin film was calculated as 1.49 eV with a high optical absorption coefficient over 104 cm−1. The Hall measurement showed the film is a p-type semiconductor with a resistivity of 1.06 Ω cm, a carrier concentration of 7.904 × 1017 cm−3 and a mobility of 7.47 cm2 Vs−1.

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Acknowledgments

This work is supported by the National Science Foundation of China (No. 21377063), the Ningbo Natural Science Foundation (No. 2012A610120), K.C. Wong Magna Fund in Ningbo University and “Information and Communication Engineering” Priority Discipline Open Fund of Zhejiang Province.

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Authors and Affiliations

  1. College of Information Science and Engineering, Ningbo University, Ningbo, 315211, People’s Republic of China

    Shanshan Zhou, Ruiqin Tan & Xiang Shen

  2. Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, People’s Republic of China

    Xin Jiang

  3. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People’s Republic of China

    Wei Xu & Weijie Song

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  1. Shanshan Zhou
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  2. Ruiqin Tan
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  3. Xin Jiang
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Correspondence to Ruiqin Tan.

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Zhou, S., Tan, R., Jiang, X. et al. Growth of CZTS thin films by sulfurization of sputtered single-layered Cu–Zn–Sn metallic precursors from an alloy target. J Mater Sci: Mater Electron 24, 4958–4963 (2013). https://doi.org/10.1007/s10854-013-1507-5

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  • DOI: https://doi.org/10.1007/s10854-013-1507-5

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