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Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers

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Abstract

Microscopic and spectroscopic photoluminescence (PL) mapping was performed on a region including intra-grain defects in multicrystalline silicon wafers in the temperature range between 15 and 300 K, and the temperature dependence of PL spectra from the region was studied. We confirmed that the origin of deep-level emission with an intensity maximum at 0.78 eV at room temperature was different from that of dislocation-related lines at low temperature. We believe that the 0.78 eV emission is associated with oxygen precipitation, and that the intra-grain defects are dislocation clusters decorated with not only heavy-metal but also oxygen impurities.

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Authors and Affiliations

  1. Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa, 229-8510, Japan

    M. Inoue, H. Sugimoto & M. Tajima

  2. Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan

    M. Inoue & A. Ogura

  3. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, Aichi, 468-8511, Japan

    Y. Ohshita

Authors
  1. M. Inoue
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  2. H. Sugimoto
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  3. M. Tajima
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  4. Y. Ohshita
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  5. A. Ogura
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Correspondence to M. Inoue.

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Inoue, M., Sugimoto, H., Tajima, M. et al. Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers. J Mater Sci: Mater Electron 19 (Suppl 1), 132–134 (2008). https://doi.org/10.1007/s10854-008-9605-5

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  • DOI: https://doi.org/10.1007/s10854-008-9605-5

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