Abstract
In the past years a strong attention has been focused on the optical and transport properties of semiconductor hetero-structures owing to the possibility of tailoring material parameters such as the electron effective mass and the band gap, by changing the structure parameters. Recent experimental results on InxGa1−xAs structures cannot be explained in the framework of standard theoretical and simulative approaches for the description of carrier transport in quantum wells. In order to get a better insight on the effect of the surface roughness on the conductance, we have considered meandering quantum wires and have computed their coherent transport characteristics. We find that, at low energies, the transmission coefficient is strongly dependent on the SR parameters. The dependence of conductance upon length of the device is also analyzed.
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Cancellieri, E., Bertoni, A., Jacoboni, C. et al. Conductance of meandering wires. J Comput Electron 6, 73–76 (2007). https://doi.org/10.1007/s10825-006-0073-y
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DOI: https://doi.org/10.1007/s10825-006-0073-y