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A fully integrated 2.4 dB NF capacitive cross coupling CG-LNA for LTE band

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Abstract

This paper presents a common gate low noise amplifier utilizing a passive feedback network that provides a competitive and highly integrated front-end solution for mobile handset devices. This design utilizes a resistive load instead of the inductive one used in other designs to reduce the on-chip silicon area. The design does not need an external matching network which decrease the area of the PCB while achieving a sufficient input impedance matching, S11. It achieves a measured gain higher than 20 dB, noise figure less than 3 dB and input referred third order intercept point (IIP3) value higher than − 2.5 dBm at 2.3 GHz. The design is implemented in 65 nm UMC CMOS technology, occupies a total area of 0.065 mm2 and consumes 5 mW from a 1.4 V supply.

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Acknowledgements

This work was supported by Tubitak Grant 113E201.

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Authors and Affiliations

  1. Department of Electronics and Computer Engineering, Graduate School of Natural and Applied Science, Istanbul Sehir University, Istanbul, Turkey

    Amr A. Abdelhamid & Mehmet T. Ozgun

  2. School of Engineering and Natural Sciences, Istanbul Medipol University, Istanbul, Turkey

    Hakan Dogan

Authors
  1. Amr A. Abdelhamid
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  2. Mehmet T. Ozgun
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  3. Hakan Dogan
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Correspondence to Amr A. Abdelhamid.

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Abdelhamid, A.A., Ozgun, M.T. & Dogan, H. A fully integrated 2.4 dB NF capacitive cross coupling CG-LNA for LTE band. Analog Integr Circ Sig Process 99, 159–166 (2019). https://doi.org/10.1007/s10470-019-01399-w

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