Abstract
Electron-rich thiophene-flanked thiazoloisoindigo (Th-TzII) has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport. Here, we report that by using an electron deficient thiazole as the flanked moiety, the corresponding thiazoloisoindigo (Tz-TzII) can still be synthesized, although in a more sinuous way. Theoretical calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII, and the corresponding polymer P(TzII-Tz-T-Tz) exhibits high and balanced hole/electron mobility of 0.70/0.64 cm2·V−1·s−1.
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Acknowledgments
This work was financially supported by the National Science Foundation of China (Nos. 22075105 and 22102086) and the start-up funding from Jianghan University. We thank Prof. Chunming Yang and Prof. Xichang Bao and Shanghai Synchrotron Radiation Facility for GIWAXS test and analysis.
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Lv, SY., Li, QY., Li, BW. et al. Thiazole-Flanked Thiazoloisoindigo as a Monomer for Balanced Ambipolar Polymeric Field-effect Transistors. Chin J Polym Sci 40, 1131–1140 (2022). https://doi.org/10.1007/s10118-022-2731-3
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DOI: https://doi.org/10.1007/s10118-022-2731-3