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Sulfur incorporation in electroplated Cu(Ag) thin films

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Abstract.

Cu(Ag) films are a promising interconnect material due to their low electrical resistivity and due to an expected increase of the electromigration resistance by alloying effects compared to pure copper films. Besides the alloying element also impurities are incorporated into the film during the electrochemical deposition process, which can retard or enhance electromigration damage. An impurity element of special interest is sulfur, which could probably improve the interconnect reliability besides the alloying element silver. In this paper, the incorporation, the distribution and the chemical state of sulfur in Cu(Ag) films is discussed in dependence on the thermal history. The investigations were mainly carried out by XPS and GD-OES measurements.

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Authors and Affiliations

  1. IFW Dresden, P.O. Box 270116, D-01171, Dresden, Germany

    Steffen Strehle, Rainer Reiche, Volker Hoffmann, Jörg Acker, Thomas Gemming & Klaus Wetzig

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  1. Steffen Strehle
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  2. Rainer Reiche
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  3. Volker Hoffmann
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  4. Jörg Acker
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  5. Thomas Gemming
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  6. Klaus Wetzig
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Correspondence to Steffen Strehle.

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Strehle, S., Reiche, R., Hoffmann, V. et al. Sulfur incorporation in electroplated Cu(Ag) thin films. Microchim Acta 156, 167–172 (2006). https://doi.org/10.1007/s00604-006-0607-9

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  • DOI: https://doi.org/10.1007/s00604-006-0607-9

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