Abstract
P-beam writing (proton beam writing), a direct write 3D nano lithographic technique has been employed for the production of X-ray masks in a single step fabrication process, with high aspect ratios and extremely smooth absorber edges. P-beam writing employs a focused MeV proton beam scanned in a predetermined pattern over a resist (e.g. PMMA or SU-8), which is subsequently chemically developed. P-beam writing in combination with electroplating appears ideally suited to directly write X-ray masks with nano sized features, high aspect ratios, small lateral feature sizes, and smooth and vertical sidewalls. Sub 100 nm resist structures with aspect ratios up 160 have been produced, as well as metallic (nickel) structures down to the 100 nm level. Preliminary tests on p-beam written X-ray test masks show that Ni stencils can be fabricated with a thickness of 2–20 μm, smooth side walls, feature details down to 1 μm, and aspect ratios up to 20.
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The authors wish to acknowledge financial support from ASTAR Singapore, the MOE Academic Research Fund as well as the AOARD (Asian Office of Aerospace Research & Development)
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van Kan, J.A., Shao, P.G., Ansari, K. et al. Proton beam writing: a tool for high-aspect ratio mask production. Microsyst Technol 13, 431–434 (2007). https://doi.org/10.1007/s00542-006-0192-1
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DOI: https://doi.org/10.1007/s00542-006-0192-1