Abstract.
We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films. Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application as well as the study of electron–phonon interaction.
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Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000
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Tilke, A., Pescini, L., Blick, R. et al. Single-electron tunneling in silicon nanostructures. Appl Phys A 71, 357–365 (2000). https://doi.org/10.1007/s003390000549
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DOI: https://doi.org/10.1007/s003390000549