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Effect of DC negative bias on microstructure and surface morphology of amorphous silicon carbide films prepared by HWP-CVD

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Abstract

The effect of DC negative bias (− Vs) on microstructure and surface morphology of amorphous silicon carbide thin films prepared by helicon wave plasma chemical vapor deposition is reported. Microstructure and surface morphology were obtained by scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that the increase of − Vs on the substrate make a more compact film and lower surface roughness, which can reach 0.56 nm. The XRD analysis reveals that the SiC thin films are of an amorphous structure. Percentages of carbon and silicon atoms (C/Si) were measured by energy dispersive spectrometer (EDS), and the C/Si ratio can reach 1.45. The structural properties of the films were studied by Raman spectroscopy techniques and Fourier transform infrared (FTIR). It is found that the films contain not only Si–C bonds but also Si–CHx bonds. Raman spectra results show that the proportion of disordered carbon in the films decreases with the increase of − Vs. The results of ultra-microhardness tester show that the hardness of the films increases with the increase of − Vs and the maximum mechanical hardness can reach 18.5 GPa at − Vs  = − 60 V.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (nos. 11435009, 11975163), a Project funded by China Postdoctoral Science Foundation (no. 156455), a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) and a Project Funded by the Postgraduate Research & Practice Innovation Program of Jiangsu Province (no. KYCX19_1966).

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Authors and Affiliations

  1. School of Physics Science and Technology and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China

    Peiyu Ji, Jiali Chen, Chenggang Jin & Xuemei Wu

  2. The Key Laboratory of Thin Films of Jiangsu, Soochow University, Suzhou, 215006, China

    Peiyu Ji, Jiali Chen, Chenggang Jin & Xuemei Wu

  3. Analysis and Testing Center, Soochow University, Suzhou, 215123, China

    Lanjian Zhuge

  4. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

    Tianyuan Huang

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  1. Peiyu Ji
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  2. Jiali Chen
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  3. Tianyuan Huang
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  4. Chenggang Jin
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Correspondence to Chenggang Jin or Xuemei Wu.

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Ji, P., Chen, J., Huang, T. et al. Effect of DC negative bias on microstructure and surface morphology of amorphous silicon carbide films prepared by HWP-CVD. Appl. Phys. A 126, 247 (2020). https://doi.org/10.1007/s00339-020-3349-3

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  • DOI: https://doi.org/10.1007/s00339-020-3349-3

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