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n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

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Abstract

Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 1018–1019 cm−3 from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 1018 cm−3 from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 1018 cm−3.

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Acknowledgements

This work was partially supported by JSPS KAKENHI Grant-in-Aid for Young Scientists (B) (Grant no. 16K18238) and NIMS Joint Research Hub Program. The authors are thankful to the Center for Instrumental Analysis in Kyushu Institute of Technology (KITCIA) for X-ray diffraction and SEM measurements, and Foundation for Promotion of Material Science and Technology of Japan (MST) for SIMS measurements.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata, Kitakyushu, Fukuoka, 804-8550, Japan

    Yūki Katamune, Daichi Mori, Daisuke Arikawa & Akira Izumi

  2. Electric and Electronic Materials Field, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan

    Takehiro Shimaoka, Kimiyoshi Ichikawa & Satoshi Koizumi

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  1. Yūki Katamune
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Katamune, Y., Mori, D., Arikawa, D. et al. n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation. Appl. Phys. A 126, 879 (2020). https://doi.org/10.1007/s00339-020-04060-w

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