Abstract
2D layered material Bi2O2Se nanosheets, due to its high carrier mobility, near-ideal subthreshold swing, and high air-stability, which have shown great potential for applications in high-performance field-effect transistors and photodetector. Here, we have been successfully synthesized Bi2O2Se nanosheets via a facile one-step hydrothermal method. The Bi2O2Se nanosheets were characterized by scanning electron microscopy (SEM), Raman spectra and X-ray diffraction (XRD) patterns, which confirm an excellent crystallized of Bi2O2Se nanosheets. The as-prepared Bi2O2Se nanosheets were used to fabricate electrodes for a self-powered photodetector and exhibit preferable photoresponse activity. At 0 V, the photoeletrochemical (PEC) tests demonstrate that the responsivity and the response time of Bi2O2Se nanosheets can reach up to 20 μA W−1 and 0.12 s. Furthermore, the time stability and cycle stability also were measured. After a long time of testing, the photocurrent of Bi2O2Se nanosheets remained around 300 nA, and after processing 100 and 200 cycles, the photocurrent exhibits slight distinction. These findings indicate that Bi2O2Se nanosheets have great prospects for future applications in self-powered photodetector devices.
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F. Koppens, T. Mueller, P. Avouris, A. Ferrari, M. Vitiello, M. Polini, Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9, 780 (2014)
K.F. Mak, J. Shan, Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photonics 10, 216 (2016)
J. Li, Z. Wang, Y. Wen, J. Chu, L. Yin, R. Cheng, L. Lei, P. He, C. Jiang, L. Feng, High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Adv. Funct. Mater. 28, 1706437 (2018)
U. Khan, Y. Luo, L. Tang, C. Teng, J. Liu, B. Liu, H.M. Cheng, Controlled vapor-solid deposition of millimeter-size single crystal 2D Bi2O2Se for high-performance phototransistors. Adv. Funct. Mater. 29, 1807979 (2019)
J. Wu, C. Tan, Z. Tan, Y. Liu, J. Yin, W. Dang, M. Wang, H. Peng, Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett. 17, 3021 (2017)
J. Wu, H. Yuan, M. Meng, C. Chen, Y. Sun, Z. Chen, W. Dang, C. Tan, Y. Liu, J. Yin, High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 12, 530 (2017)
J. Li, Z. Wang, J. Chu, Z. Cheng, P. He, J. Wang, L. Yin, R. Cheng, N. Li, Y. Wen, J. He, Oriented layered Bi2O2Se nanowire arrays for ultrasensitive photodetectors. Appl. Phys. Lett. 114, 151104 (2019)
Q. Fu, C. Zhu, X. Zhao, X. Wang, A. Chaturvedi, C. Zhu, X. Wang, Q. Zeng, J. Zhou, F. Liu, Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Adv. Mater. 31, 1804945 (2019)
Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, H. Zhang, Single-layer MoS2 phototransistors. ACS nano. 6, 74 (2012)
J. Wu, Y. Liu, Z. Tan, C. Tan, J. Yin, T. Li, T. Tu, H. Peng, Chemical patterning of high-mobility semiconducting 2D Bi2O2Se crystals for integrated optoelectronic devices. Adv. Mater. 29, 1704060 (2017)
S.C. Dhanabalan, J.S. Ponraj, H. Zhang, Q. Bao, Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials. Nanoscale 8, 6410 (2016)
A. Rogalski, Infrared detectors: status and trends. Progress Quantum Electron. 27, 59 (2003)
C. Downs, T. Vandervelde, Progress in infrared photodetectors since 2000. Sensors 13, 5054 (2013)
P. Martyniuk, J. Antoszewski, M. Martyniuk, L. Faraone, A. Rogalski, New concepts in infrared photodetector designs. Appl. Phys. Rev. 1, 041102 (2014)
Y.I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, H. Morkoç, Photoresponse of n-Zn O/p-Si C heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett. 86, 241108 (2005)
G. Cheng, X. Wu, B. Liu, B. Li, X. Zhang, Z. Du, ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed. Appl. Phys. Lett. 99, 203105 (2011)
H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, S. Sugimura, K. Hane, Y. Kashiwaba, Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate. Appl. Phys. Lett. 90, 121906 (2007)
H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, Q. Xu, Ti O2 based metal-semiconductor-metal ultraviolet photodetectors. Appl. Phys. Lett. 90, 201118 (2007)
C.-H. Chen, C.-M. Tsai, C.-F. Cheng, S.-F. Yen, P.-Y. Su, Y.-H. Tsai, C.-N. Tsai, GaN-based metal–insulator–semiconductor ultraviolet photodetectors with CsF current-suppressing layer. Jpn. J. Appl. Phys. 51, 04DG15 (2012)
L. Meng, Y. Li, B. Yao, Z. Ding, G. Yang, R. Liu, R. Deng, L. Liu, Visible-blind ultraviolet photodetector based on p-Cu2CdSnS4/n-ZnS heterojunction with a type-I band alignment. J. Appl. Phys. 120, 235306 (2016)
X. Chen, H. Zhu, J. Cai, Z. Wu, High-performance 4H-SiC-based ultraviolet p–i–n photodetector. J. Appl. Phys. 102, 024505 (2007)
C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D. Aplin, J. Park, X. Bao, Y.-H. Lo, D. Wang, ZnO nanowire UV photodetectors with high internal gain. Nano Lett. 7, 1003 (2007)
H. Zhu, C. Shan, B. Yao, B. Li, J. Zhang, D. Zhao, D. Shen, X. Fan, High spectrum selectivity ultraviolet photodetector fabricated from an n-ZnO/p-GaN heterojunction. J. Phys. Chem. C 112, 20546 (2008)
H. Zhu, C. Shan, L. Wang, J. Zheng, J. Zhang, B. Yao, D. Shen, Metal–oxide–semiconductor-structured MgZnO ultraviolet photodetector with high internal gain. J. Phys. Chem. C 114, 7169 (2010)
J.-K. Sheu, M.-L. Lee, C.-J. Tun, S. Lin, Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-Ga N. Appl. Phys. Lett. 88, 043506 (2006)
F. Sun, C.-X. Shan, S.-P. Wang, B.-H. Li, Z.-Z. Zhang, C.-L. Yang, D.-Z. Shen, Ultraviolet photodetectors fabricated from ZnO p–i–n homojunction structures. Mater. Chem. Phys. 129, 27 (2011)
C. Yang, X. Li, W. Yu, X. Gao, X. Cao, Y. Li, Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction. J. Phys. D Appl. Phys. 42, 152002 (2009)
Z. Zhan, L. Zheng, Y. Pan, G. Sun, L. Li, Self-powered, visible-light photodetector based on thermally reduced graphene oxide–ZnO (rGO–ZnO) hybrid nanostructure. J. Mater. Chem. 22, 2589 (2012)
L. Peng, L. Hu, X. Fang, Energy harvesting for nanostructured self-powered photodetectors. Adv. Funct. Mater. 24, 2591 (2014)
K. Zhang, C. Hu, X. Kang, S. Wang, Y. Xi, H. Liu, Synthesis and thermoelectric properties of Bi2O2Se nanosheets. Mater. Res. Bull. 48, 3968 (2013)
Y. Ling, G.G. Wang, D.A. Wheeler, J.Z. Zhang, Y. Li, Sn-doped hematite nanostructures for photoelectrochemical water splitting. Nano Lett. 11, 2119 (2011)
D. Ma, J. Zhao, R. Wang, C. Xing, Z. Li, W. Huang, X. Jiang, Z. Guo, Z. Luo, Y. Li, Ultrathin GeSe nanosheets: from systematic synthesis to studies of carrier dynamics and applications for a high-performance UV–vis photodetector. ACS Appl. Mater. Interfaces 11, 4278 (2019)
Y. Xie, L. Wei, G. Wei, Q. Li, D. Wang, Y. Chen, S. Yan, G. Liu, L. Mei, J. Jiao, A self-powered UV photodetector based on TiO2 nanorod arrays. Nanoscale Res Lett. 8, 188 (2013)
X. Ren, Z. Li, Z. Huang, D. Sang, H. Qiao, X. Qi, J. Li, J. Zhong, H. Zhang, Environmentally robust black phosphorus nanosheets in solution: application for self-powered photodetector. Adv. Funct. Mater. 27, 1606834 (2017)
Q. Hong, Y. Cao, J. Xu, H. Lu, J. He, J.-L. Sun, Self-powered ultrafast broadband photodetector based on p–n heterojunctions of CuO/Si nanowire array. ACS Appl. Mater. Interfaces 6, 20887 (2014)
R.J. Candal, W.A. Zeltner, M.A. Anderson, Effects of pH and applied potential on photocurrent and oxidation rate of saline solutions of formic acid in a photoelectrocatalytic reactor. Environ. Sci. Technol. 34, 3443 (2000)
S.M. Hatch, J. Briscoe, S. Dunn, A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response. Adv. Mater. 25, 867 (2013)
M. Zhang, Y. Liu, M. Yang, W. Zhang, J. Zhou, Z. Zhang, E. Xie, X. Pan, S. Li, High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires. Appl. Surf. Sci. 452, 43 (2018)
Y. Zhang, P. Huang, J. Guo, R. Shi, W. Huang, Z. Shi, L. Wu, F. Zhang, L. Gao, C. Li, Graphdiyne-based flexible photodetectors with high responsivity and detectivity. Adv. Mater. 32, 2001082 (2020)
Z. Li, H. Qiao, Z. Guo, X. Ren, Z. Huang, X. Qi, S.C. Dhanabalan, J.S. Ponraj, D. Zhang, J. Li, High-performance photo-electrochemical photodetector based on liquid-exfoliated few-layered InSe nanosheets with enhanced stability. Adv. Funct. Mater. 28, 1705237 (2018)
Acknowledgements
This work was financially supported by the Open Fund based on innovation platform of Hunan colleges and universities (no. 19K095), the Grants from National Natural Science Foundation of China (no. 11874316), the Program for Changjiang Scholars and Innovation Research Team in University (IRT 17R91).
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Chen, G., Wu, J., Wang, B. et al. High-performance self-powered photodetector based on Bi2O2Se nanosheets. Appl. Phys. A 126, 579 (2020). https://doi.org/10.1007/s00339-020-03759-0
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DOI: https://doi.org/10.1007/s00339-020-03759-0