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Electroforming-free TaOx memristors using focused ion beam irradiations

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Abstract

We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.

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Acknowledgements

The authors thank R. Goeke for support with device fabrication. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    J. L. Pacheco, D. L. Perry, D. R. Hughart, M. Marinella & E. Bielejec

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  1. J. L. Pacheco
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  2. D. L. Perry
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  3. D. R. Hughart
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  4. M. Marinella
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  5. E. Bielejec
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Correspondence to E. Bielejec.

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Pacheco, J.L., Perry, D.L., Hughart, D.R. et al. Electroforming-free TaOx memristors using focused ion beam irradiations. Appl. Phys. A 124, 626 (2018). https://doi.org/10.1007/s00339-018-2041-3

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  • DOI: https://doi.org/10.1007/s00339-018-2041-3

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