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High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

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Abstract

InGaN-based multiple quantum wells (MQWs) yellow light-emitting diodes (LEDs) were grown on Si substrate by metal organic vapor deposition. Blue MQWs were introduced as strain modulation layers for yellow MQWs. The LED chips emitted 72-mW yellow light with 566-nm dominant wavelength and 9.4 % external quantum efficiency (EQE) at 350 mA under room temperature, and it reached a peak EQE of 22.2 % at 0.7 mA. A comparison sample without strain modulation layers exhibited much weaker performance. The results reveal that long-wavelength emission of InGaN system is reliable if the strain of MQWs has been properly modulated.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 51072076), the Key Program of the National Natural Science Foundation of China (Grant No. 61334001), the Fund for Less Developed Regions of the National Natural Science Foundation of China (Grant No. 11364034), the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE32B01) and the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A101,2012AA041002).

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Authors and Affiliations

  1. The National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang, 330047, People’s Republic of China

    Jianli Zhang, Chuanbing Xiong, Junlin Liu, Zhijue Quan, Li Wang & Fengyi Jiang

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  1. Jianli Zhang
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  2. Chuanbing Xiong
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  3. Junlin Liu
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  4. Zhijue Quan
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  5. Li Wang
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Correspondence to Jianli Zhang.

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Zhang, J., Xiong, C., Liu, J. et al. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate. Appl. Phys. A 114, 1049–1053 (2014). https://doi.org/10.1007/s00339-014-8283-9

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