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Pulsed laser deposition of BiCuOSe thin films

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Abstract

Undoped and 10% Ca-doped BiCuOSe thin films are prepared by pulsed laser deposition without ex-situ processing. The influence of the preparation conditions on structure and properties of Bi0.9Ca0.1CuOSe thin films on amorphous silica substrates is studied. The highest achieved concentration and mobility of free holes (3.9×1020 cm−3 and 3.5 cm2/Vs) was close to that measured in strongly c-axis oriented samples on SrTiO3 substrates (4.0×1020 cm−3 and 7.5 cm2/Vs). The Bi0.9Ca0.1CuOSe films on SrTiO3 show almost temperature-independent Seebeck coefficient and their resistivity increases with increasing temperature. The Seebeck coefficient of undoped BiCuOSe films on SrTiO3 increases below 150°K, and the resistivity shows a flat plateau centered at this temperature. Optical measurements suggest that BiCuOSe has an indirect bandgap of 0.8 eV and a strong absorption edge at 1.45 eV. Ab-initio calculations of the electronic band structure, effective masses and optical properties of BiCuOSe are also presented.

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Authors and Affiliations

  1. Department of Physics, Oregon State University, Corvallis, OR, 97331-6507, USA

    A. Zakutayev, P. F. Newhouse, R. Kykyneshi & J. Tate

  2. Department of Chemistry, Oregon State University, Corvallis, OR, 97331-6507, USA

    P. A. Hersh & D. A. Keszler

Authors
  1. A. Zakutayev
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  2. P. F. Newhouse
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  3. R. Kykyneshi
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  4. P. A. Hersh
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  5. D. A. Keszler
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  6. J. Tate
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Correspondence to J. Tate.

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Zakutayev, A., Newhouse, P.F., Kykyneshi, R. et al. Pulsed laser deposition of BiCuOSe thin films. Appl. Phys. A 102, 485–492 (2011). https://doi.org/10.1007/s00339-010-5946-z

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  • DOI: https://doi.org/10.1007/s00339-010-5946-z

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