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Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture

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Abstract

The electrical and optical properties of ZnO thin films grown with an O2/O3 gas mixture are compared with samples grown with pure oxygen gas. The ZnO films were grown on sapphire(0001) by pulsed laser deposition. The residual background carrier concentration is reduced by using an O2/O3 gas mixture as compared to pure molecular oxygen. In particular, a one order of magnitude reduction in residual background carrier density (6.15×1016 cm-3) is achieved by using an O2/O3 gas mixture. The lower donor defect density is attributed to the generation of acceptor defects compensating for the residual donor defects. Photoluminescence results show that the deep level emission increased and the band edge emission decreased for the ZnO films grown with ozone, as compared to the samples grown with pure oxygen gas.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    H.S. Kim, J.-M. Erie, S.J. Pearton & D.P. Norton

  2. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    F. Ren

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  1. H.S. Kim
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  2. J.-M. Erie
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  3. S.J. Pearton
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  4. D.P. Norton
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Correspondence to D.P. Norton.

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PACS

73.61.Ga; 78.55Et; 81.05 Dz; 81.15.Fg

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Kim, H., Erie, JM., Pearton, S. et al. Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture. Appl. Phys. A 91, 251–254 (2008). https://doi.org/10.1007/s00339-008-4426-1

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  • DOI: https://doi.org/10.1007/s00339-008-4426-1

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