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A valence-band and core-level photoemission study of a-SixC1-x thin films grown by low-temperature low-pressure chemical vapour deposition

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Abstract

Amorphous SixC1-x thin films have been grown by low-pressure chemical vapour deposition at 800 K from Si2H6 and C2H2 in the x concentration range 0.5≤x<0.7. Measurements of the valence-band and core-level photoemission spectra using X-ray photoemission spectroscopy and synchrotron radiation have shown a clear change in the electronic structure for 0.55<x<0.60, where the films appear to lose their predominant SiC character and acquire an increasing Si-like signature in the spectra. X-ray diffraction data on polycrystalline SixC1-x films obtained by excimer laser annealing during growth have shown the formation of a dominant 3C-SiC phase up to x=0.6, while for higher x the growth of a poly-Si phase has been observed .

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Authors and Affiliations

  1. ENEA C.R. Frascati, v. E. Fermi 45, 00044, Frascati, Italy

    A. Santoni & S. Loreti

  2. Institute of Physics, Czech Academy of Science, Na Slovance 2, 182 21, Prague 8, Czech Republic

    J. Lancok

  3. Physics Department, University of Liverpool, Liverpool, L69 3BX, UK

    V.R. Dhanak & G. Miller

  4. ENEA C.R. Portici, 80055, Portici, Italy

    C. Minarini

Authors
  1. A. Santoni
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  2. J. Lancok
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  3. V.R. Dhanak
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  4. S. Loreti
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  5. G. Miller
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  6. C. Minarini
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Correspondence to A. Santoni.

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PACS

81.15.Gh; 79.60.Dp

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Santoni, A., Lancok, J., Dhanak, V. et al. A valence-band and core-level photoemission study of a-SixC1-x thin films grown by low-temperature low-pressure chemical vapour deposition. Appl. Phys. A 81, 991–996 (2005). https://doi.org/10.1007/s00339-004-2976-4

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  • DOI: https://doi.org/10.1007/s00339-004-2976-4

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