Abstract
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si δ-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrödinger and Poisson equations self-consistently. We thus find the confining potential, the electronic density, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. From the self-consistent calculation, we have seen that the effective potential profile and the electronic density of two coupled Si δ-doped GaAs structure are sensitive to the donor thickness while the subband energies and the subband occupations are not sensitive to the donor thickness .
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73.20.Dx; 73.20.At; 73.90.+f
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Ozturk , E., Ergun , Y., Sari , H. et al. Electronic structure of two coupled Si δ-doped GaAs as dependent on the donor thickness. Appl Phys A 77, 427–431 (2003). https://doi.org/10.1007/s00339-002-1484-7
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DOI: https://doi.org/10.1007/s00339-002-1484-7