Skip to main content
SpringerLink
Log in

Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers

  • Published:
Fresenius' Journal of Analytical Chemistry Aims and scope Submit manuscript

Abstract

The molecular ions O+ 2 and NO+ are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt, Germany

    R. W. Michelmann, H. Baumann, A. Markwitz, J. D. Meyer, E. F. Krimmel & K. Bethge

  2. Institut für Spektrochemie und angewandte Spektroskopie, LSMU, Berlin, Germany

    A. Röseler

Authors
  1. R. W. Michelmann
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Baumann
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Markwitz
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. D. Meyer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. Röseler
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. E. F. Krimmel
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. K. Bethge
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Michelmann, R.W., Baumann, H., Markwitz, A. et al. Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers. Fresenius J Anal Chem 353, 403–407 (1995). https://doi.org/10.1007/s0021653530403

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s0021653530403

Keywords

Search

Navigation