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Modification of diamond single crystals by chromium ion implantation with sacrificial layers

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Abstract.

Single-crystal diamond surfaces were implanted with chromium ions. Ion energies chosen were 120 and 180 keV. Ion doses of 1×1017 cm–2 were applied at a substrate temperature of 750 °C. Reduced lattice damage could be obtained by deposition of a titanium sacrificial layer with a thickness of 10 and 50 nm before implantation. Depth profiles of the elemental binding states were taken by photoelectron spectroscopy. The effect of the sacrificial layer thickness on diamond lattice damage was investigated by infrared spectroscopy.

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  1. IWT, Stiftung Institut für Werkstofftechnik, Badgasteiner Str. 3, 28359 Bremen, Germany, Germany

    H.-R. Stock, J. Kohlscheen & P. Mayr

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  1. H.-R. Stock
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  2. J. Kohlscheen
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  3. P. Mayr
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Stock, HR., Kohlscheen, J. & Mayr, P. Modification of diamond single crystals by chromium ion implantation with sacrificial layers. Anal Bioanal Chem 374, 1335–1337 (2002). https://doi.org/10.1007/s00216-002-1589-z

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  • DOI: https://doi.org/10.1007/s00216-002-1589-z

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