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Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction

  • Material Sciences and Industrial Applications
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Abstract

A measuring technique based on the alpha particles being released from the10B(n, α) nuclear reaction and using the time-of-flight technique at a periodically pulsing reactor was developed. Non-destructive determination for the range distribution of boron impurities in ion-implanted silicon have been performed. Projected ranges obtained in the energy region 20–80 keV are compared to calculated results and to other experiments. Examples are shown for some typical boron distributions before and after annealing the sample.

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Authors and Affiliations

  1. Central Research Institute for Physics, P.O. Box 49, H-1525, Budapest, (Hungary)

    Á. Z. Nagy, J. Gyulai & A. Csőke

  2. Laboratory of Neutron Physics Joint Institute for Nuclear Research, Dubna, P.O. Box 79, Moscow, (USSR)

    J. Bogáncs, V. Nazarov, Z. Seres, A. Szabo & Yu. Yazvitsky

Authors
  1. Á. Z. Nagy
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  2. J. Bogáncs
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  3. J. Gyulai
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  4. A. Csőke
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  5. V. Nazarov
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  6. Z. Seres
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  7. A. Szabo
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  8. Yu. Yazvitsky
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Nagy, Á.Z., Bogáncs, J., Gyulai, J. et al. Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction. J. Radioanal. Chem. 38, 19–27 (1977). https://doi.org/10.1007/BF02520179

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  • DOI: https://doi.org/10.1007/BF02520179

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