Cited References
Indicates key paper48Kle: W. Klemm, L. Klemm, E. Hohmann, H. Volk, E. Orlamunder, and H. A. Klein, “Behavior of Group III Elements Alloyed with Each Other and with Group IV Elements,”Z. Anorg. Chem., 256, 239–252 (1948) in German. (Equi Diagram; Experimental; Indicates presence of a phase diagram)
53Kec: P. H. Keck and J. Broder, “The Solubility of Silicon and Germanium in Gallium and Indium,”Phys. Rev. Lett., 90, 521–522 (1953). (Equi Diagram; Experimental)
53Thu: C. D. Thurmond, “Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.,”J. Phys. Chem., 57, 827–830 (1953). (Equi Diagram, Thermo; Theory)
54Bur: J. A. Burton, “Impurity Centers in Ge and Si,”Physica, 20, 845–854 (1954). (Crys Structure, Equi Diagram; Theory)
58Sav: Y. M. Savitskiy, V. V. Baron, and M. A. Tylkina, “Phase Diagrams on Properties of Alloys of Gallium and Thallium,”Russ. J. Inorg. Chem., 3, 310–327 (1958). (Equi Diagram; Experimental; Indicates presence of a phase diagram)
60Thu: C. D. Thurmond and M. Kowalchik, “Germanium and Silicon Liquidus Curves,”Bell Sys. Tech. J., 39, 169–204 (1960). (Equi Diagram, Thermo; Theory)
60Tru: F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,”Bell Sys. Tech. J., 39, 205–233 (1960). (Equi Diagram; Experimental)
70Rao: M. V. Rao and W. A. Tiller, “Excess Free Energies in the Ge, Si and Ga Binary Systems—the α Parameter Approach,”J. Phys. Chem. Solids, 31, 191–198 (1970). (Thermo; Theory)
74Jor: A. S. Jordan and M. E. Weiner, “Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems,”J. Electrochem. Soc., 121, 1634–1641 (1974). (Thermo, Equi Diagram; Theory)
77Bar: I. Barin, O. Knacke, and O. Kubaschewski,Thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1973);Supplement (1977). (Thermo; Compilation)
77Def: A. Defrain, “Metastable States of Gallium Undercooling and Polymorphism,”J. Chim. Phys., 74, 851–862 (1977) in French. (Meta Phases, Crys. Structure; Review)
77Gir: B. Girault, “Liquidus Curves of Several Silicon-Metal Systems,”C. R. Hebd. Séances Acad. Sci. B, 284, 1–4 (1977) in French (Equi Diagram; Experimental)
77Tho: D. D. Thornton, “The Gallium Melting-Point Standard: A Determination of the Liquid-Solid Equilibrium Temperature of Pure Gallium on the International Practical Temperature Scale of 1968,” NBS Spec. Pub. No. 481, 719–724 (1977). (Equi Diagram; Experimental)
79Tsa: M. Y. Tsai, B. G. Streetman, V. R. Deline, and C. A. Evans, Jr., “Gallium Distribution and Electrical Activation in Ga+-Implanted Si,”J. Electron. Mater., 8, 111–126 (1979). (Meta Phases; Experimental)
80Har: S. Haridoss, F. Beniere, M. Gauneau, and A. Rupert, “Diffusion of Gallium in Silicon,”J. Appl. Phys., 51, 5833–5837 (1980). (Equi Diagram; Experimental)
80Whi: C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr., “Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group III and Group V Dopants in Silicon,”J. Appl. Phys., 51, 738–749 (1980). (Meta Phases; Experimental)
81Ako: R. A Akopyan and V. V. Kachakhidze, “Specification of the Boundaries of Si-Base Homogeneity Regions in the Si−Al and Si−Ga Systems,”Izv. Akad. Nauk SSSR, Neorg. Mater., 17, 1792–1794 (1981) in Russian. (Equi Diagram; Experimental)
81Aro: B. M. Arora, J. M. Castillo, M. B. Kurup, and R. P. Sharma, “Thermal Annealing and Electrical Activation of High-Dose Gallium-Implanted Silicon,”J. Electron. Mater., 10, 845–862 (1981). (Meta Phases; Experimental)
83Tma: N. Tmar, A. Pasturel, and C. Colinet, “Thermodynamics of (Si+In) (Si+Ga),”J. Chem. Thermodyn., 15 (11), 1037–1040 (1983). (Thermo)
Author information
Authors and Affiliations
Additional information
This program was supported by ASM, under grant No. FG 101-1 to the University of Florida. Thermodynamic calculations were made by using the computer program developed by Drs. A. D. Pelton, W. T. Thompson, and C. W. Bale at the McGill University. Literature was searched through 1982. Professor Abbaschian is the ASM/NBS Data Program Category Editor for binary silicon alloys.
Rights and permissions
About this article
Cite this article
Olesinski, R.W., Kanani, N. & Abbaschian, G.J. The Ga−Si (Gallium-Silicon) system. Bulletin of Alloy Phase Diagrams 6, 362–364 (1985). https://doi.org/10.1007/BF02880523
Issue Date:
DOI: https://doi.org/10.1007/BF02880523