Abstract
Deposition of diamond thin films on non-diamond substrates at low pressures (<760 torr) and low temperatures (<2000°C) by chemical vapour deposition (CVD) has been the subject of intense research in the last few years. The structural and the electrical properties of CVD diamond films grown on p-type 〈111〉 and high-resistivity (>100 kΩ-cm) 〈100〉 oriented silicon substrates by hot filament chemical vapour deposition technique are described in this review paper.
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Kulkarni, A.K. Growth of diamond thin films by chemical vapour deposition. Bull. Mater. Sci. 17, 1379–1391 (1994). https://doi.org/10.1007/BF02747235
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DOI: https://doi.org/10.1007/BF02747235