Abstract
Boron activation and carrier mobility were measured after low temperature furnace heat treatments, in silicon layers implanted with BF +2 ions at 60 keV and at fluence in the 1 − 5 × 1015 ions cm−2 range. These quantities were correlated with boron and fluorine chemical depth profiles obtained with secondary ion mass spectrometry (SIMS), and with the lattice defects revealed by transmission electron microscopy (TEM). High dopant activation, well above the extrapolated boron solid solubility, was found for all the fluences investigated after a thermal treatment of 20 min at 600‡ C. In the high fluence implanted samples, the solid phase epitaxial regrowth of the amorphous layer induces a severe fluorine redistribution which causes the formation of a defective band at the sample surface containing microtwins and small precipitates; a decrease in both the activated dopant concentration and carrier mobility was found in this region. The comparison with dopant activation data obtained in samples diffused at higher temperature (from 900 to 1000‡ C) shows that twins are electrically active only when they are decorated by isolated impurities and/or in presence of very small precipitates.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. M. Liu and W. G. Oldham, IEEE Electron Devices Lett.4, 59 (1983).
M. E. Lunnon, J. T. Chen and J. E. Baker, J. Electrochem. Soc.132, 2473 (1985).
S. S. Cohen, J. F. Norton, E. F. Kock and G. J. Weisel, J. Appl. Phys.57, 1200 (1985).
T. E. Seidel, IEEE Electron Devices Lett.4, 353 (1883).
R. G. Wilson, J. Appl. Phys.54, 6879 (1983).
C. Carter, W. Maszara, D. K. Sadana, G. A. Rozgonyi, J. Liu and J. Wortman, Appl. Phys. Lett.44, 459 (1984).
G. Queirolo, P. Caprara, L. Meda, G. Ottaviani, M. Anderle and D. Bassi, Nucl. Instrum. MethodsB19, 329 (1987).
G. Queirolo, P. Caprara, L. Meda, G. Guareschi, M. Anderle, G. Ottaviani and A. Armigliato, J. Electrochem. Soc.134, 2905 (1987).
G. Queirolo, L. Meda, C. Bresolin, M. Anderle and R. Canteri, J. Electrochem. Soc.135, 111 (1988).
H. Matsumura, Y. Nakagome and S. Furukava, Appl. Phys. Lett.36, 439 (1989).
S. Prussin, D. I. Margolese and R. N. Tauber, J. Appl. Phys.54, 2316 (1983).
G. F. Cerofolini and L. Meda, Phys. Rev. B36, 5131 (1987).
T. Sands, J. Washburn, R. Gronsky, W. Maszara, D. K. Sadana and G. A. Rozgonyi, Appl. Phys. Lett.45, 982 (1984).
J. Narayan, O. W. Holland, W. H. Christie and J. J. Wortman, J. Appl. Phys.57, 2709 (1985).
N. Chang Tung J. Electrochem. Soc.132, 914 (1985).
M. E. Lunnon, J. T. Chen and J. E. Baker, Appl. Phys. Lett.45, 1056 (1984).
M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams and C. A. Evans, J. Appl. Phys.50, 188 (1979).
W. Vandervorst, D. C. Houghton, F. R. Shepherd, M. L. Swanson, H. H. Plattner and G. J. C. Carpenter, Can. J. Phys.63, 863 (1985).
C. W. Nieh and L. J. Chen, J. Appl. Phys.60, 3114 (1986).
C W. Nieh and L. J. Chen, J. Appl. Phys. 60, 3546 (1986).
C. W. Nieh and L. J. Chen, J. Appl. Phys.62, 4421 (1987).
Y. Kim, H. Z. Massoud and R. B. Fair, Appl. Phys. Lett.53, 2197 (1988).
M. Y. Tsay and B. G. Streetman, J. Appl. Phys.50, 183 (1979).
K. B. Wolfstirn, Phys. Chem. Solids16, 279 (1960).
M. Y. Tsay, B. G. Streetman, P. Williams and C. A. Evans, Appl. Phys. Lett.32, 144 (1978).
A. Garulli, A. Armigliato and M. Finetti, Ultramicroscopy26, 295 (1988).
M. Anderle, R. Canteri, G. Queirolo and D. Robba, SIMS VI, Versailles 1987.
A. Armigliato, D. Nobili, P. Ostoja, M. Servidori and S. Solmi, in Semiconductor Silicon 1977, eds. H. R. Huff and E. Stirtl, Electrochemical Society, Inc., 1977, p. 638.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Queirolo, G., Bresolin, C., Robba, D. et al. Low temperature dopant activation of BF2 implanted silicon. J. Electron. Mater. 20, 373–378 (1991). https://doi.org/10.1007/BF02670886
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02670886