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Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering

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Abstract

Raman scattering analysis of damaged SiC layers obtained by 200 keV Ge+ ion implantation into 6H-SiC has been performed as a function of the implanted dose (up to 1015 cm−2) and annealing temperature (up to 1500°C). The results obtained show the presence of three different damage levels: low damage level (doses ≤3 × 1012 cm−2), medium to high damage level (doses between 1013 and 1014 cm-2), and formation of a continuous amorphous layer for doses higher than the amorphization threshold of 2–3 × 1014 cm−2.

Moreover, at doses of about 1014 cm−2 (below the amorphization threshold) amorphous domains are already observed. The Raman spectra indicate the existence of structural differences between the amorphous phase at doses below and above the threshold. After annealing, there is a residual damage which cannot be removed even at the highest annealing temperature of 1500°C. Differences in residual damage between the samples implanted at doses of 1014 and 1015 cm-2 and annealed at the highest temperatures are observed from the peaks in the 1000–1850 cm-1 spectral region. Finally, annealing at the highest temperature is required to observe the complete disappearance of the amorphous bands.

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References

  1. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns,J. Appl. Phys. 76,1363 (1994).

    Article  Google Scholar 

  2. P.G. Neudeck,J. Electron. Mater. 24, 283 (1995).

    Article  CAS  Google Scholar 

  3. A. Arbab, A. Spetz and I. Lundström,Sensors and Actuators B 18–19, 562 (1994).

    Article  Google Scholar 

  4. G. Müller, G. Krötz and E. Niemann,Sensors and Actuators A 43, 259 (1994).

    Article  Google Scholar 

  5. J.A. Powell, P. Pirouz and W.J. Choyke,Semiconductor Interfaces, Microstructures and Devices: Properties and Ap- plications (UK: IOP Publishing Ltd., 1993), p. 257.

    Google Scholar 

  6. Cree Research Inc. Durham, NC 27713.

  7. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata and M. Watanabe,J. Electron. Mater. 24, 235 (1995).

    Article  CAS  Google Scholar 

  8. W. Wesch, A. Heft, E. Wendler, T. Bachmann and E. Glaser,Nucl. Instrum. and Meth. in Phys. Res. B 96, 335 (1995).

    Article  CAS  Google Scholar 

  9. H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun,J. Mater. Res. 2, 107 (1987).

    CAS  Google Scholar 

  10. J.A. Edmond, R.F. Davis and S.P. Withrow,Ceramic Trans. 2, 479 (1989).

    CAS  Google Scholar 

  11. C.J. McHargue and J.M. Williams,Nucl. Instrum, and Meth. in Phys. Res. B 80/81, 889 (1993).

    Article  Google Scholar 

  12. Ch. Wagner, G. Krötz, H. Sonntag, H. Möller, G. Müller and S. Kalbitzer,8th Int. Conf. on Solid-State Sensors and Actua-tors (TRANSDUCERS’95) and EUROSENSORS IX. Stockholm, Sweden, June 1995.

  13. S. Nakashima and M. Hangyo,IEEE J. Quantum Elect. 25, 965 (1989).

    Article  CAS  Google Scholar 

  14. D.W. Feldman, J.H. Parker, Jr. and W.J. Choyke,Phys. Rev. 170, 698 (1968).

    Article  CAS  Google Scholar 

  15. S. Nakashima, H. Katahama, Y. Nakakura and A. Mitsuishi,Phys. Rev. B 33, 5721 (1986).

    Article  CAS  Google Scholar 

  16. W.S. Yoo and H. Matsunami,J. Appl. Phys. 70, 7124 (1991).

    Article  CAS  Google Scholar 

  17. D. Olego and M. Cardona,Phys. Rev. B 25, 1151 (1982).

    Article  CAS  Google Scholar 

  18. A. Pérez-Rodríguez, E. Roca, T. Jawhari, J.R. Morante and R.J. Schreutelkamp,Thin Solid Films 251, 45 (1994).

    Article  Google Scholar 

  19. J. Bullot and M.P. Schmidt,Phys. Stat. Sol. B 143,345 (1987).

    Article  CAS  Google Scholar 

  20. A. Chehaidar, R. Carles, A. Zwick, C. Meunier, B. Cros and J. Durand,J. Non-Crystalline Sol. 169, 37 (1994).

    Article  CAS  Google Scholar 

  21. M. Gorman and S.A. Solin,Solid State Comm. 15,761(1974).

    Article  CAS  Google Scholar 

  22. R.O. Dillon, J.A. Woollam and V. Katkanant,Phys. Rev. B 29, 3482 (1984).

    Article  CAS  Google Scholar 

  23. D. Beeman, J. Silverman, R. Lynds and M.R. Anderson,Phys. Rev. B 30, 870 (1984).

    Article  CAS  Google Scholar 

  24. D.S. Knight and W.B. White,J. Mater. Res. 4, 385 (1989).

    CAS  Google Scholar 

  25. R.E. Shroder, R. J. Nemanich and J.T. Glass,Phys. Rev. B 41, 3738 (1990).

    Article  CAS  Google Scholar 

  26. Y. Pacaud, W. Skorupa, A. Pérez-Rodríguez, G. Brauer, J. Stoemenos and R.C. Barklie, 1995 E-MRS Spring Meeting, Strasbourg (France), May 1995.

  27. J.A. Spitznagel, S. Wood,W.J. Choyke, N.J. Doyle,J. Bradshaw and S.G. Fishman,Nucl. Instrum, and Meth. in Phys. Res. B 16, 237 (1986).

    Article  Google Scholar 

  28. V. Heera, R. Kögler, W. Skorupa and J. Stoemenos,Mater. Res. Soc. Symp. Proc. 336 (1994).

  29. J.F. Ziegler, J.P. Biersack and U. Littmark,The Stopping and Range of Ions in Solids, (New York: Pergamon, 1985), Vol. 1.

    Google Scholar 

  30. F. Finocchi, G. Galli, M. Parrinello and C. M. Bertoni,Phys. Rev. Lett. 68, 3044 (1992).

    Article  CAS  Google Scholar 

  31. A.E. Kaloyeros, R.B. Rizk and J.B. Woodhouse,Phys. Rev. B 38, 13099 (1988).

    Article  CAS  Google Scholar 

  32. A. Sproul, D.R. McKenzie and D. J.H. Cockayne.Philos. Mag. B 54, 113 (1986).

    CAS  Google Scholar 

  33. N. Laidani, R. Capelletti, M. Elena, L. Guzman, G. Mariotto, A. Miotello and P.M. Ossi,Thin Solid Films 223,114 (1993).

    Article  CAS  Google Scholar 

  34. Z.C. Feng, J. Mascarenhas, W.J. Choyke and J.A. Powell,J. Appl. Phys. 64, 3176 (1988).

    Article  CAS  Google Scholar 

  35. Y. Pacaud, G. Brauer, A. Pérez-Rodríguez, J. Stoemenos, R. Barklie, M. Voelskow and W. Skorupa, to be published in theProc. 6th Intl. Conf. on Silicon Carbide and Related Materials 1995 (ICSRM-95), (UK: IOP Publishing Ltd, 1995).

    Google Scholar 

  36. T.T. Zorba, C.L. Mitsas, I.D. Siapkas, G.Z. Tezarkis, D.I. Siapkas, Y. Pacaud and W. Skorupa,Intl. Symp. on Si Heterostructures: from Physics to Devices, Crete (Greece), Sept. 1995, to be publishedin Appl. Surf. Sci.

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Authors and Affiliations

  1. E. M. E., Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645-647, 08028, Barcelona, Spain

    A. Pérez-Rodríguez, L. Calvo-Barrio, C. Serre & J. R. Morante

  2. Forschungszentrum Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314, Dresden, Germany

    Y. Pacaud & W. Skorupa

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  1. A. Pérez-Rodríguez
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  3. L. Calvo-Barrio
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  4. C. Serre
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  5. W. Skorupa
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  6. J. R. Morante
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Pérez-Rodríguez, A., Pacaud, Y., Calvo-Barrio, L. et al. Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering. J. Electron. Mater. 25, 541–547 (1996). https://doi.org/10.1007/BF02666633

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  • DOI: https://doi.org/10.1007/BF02666633

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