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Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition

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Abstract

MgO, Al2O3 and MgAl2O4 thin films were deposited on silicon substrates at various temperatures by the atomic layer deposition (ALD) method using bis(cyclopentadienyl)magnesium, triethylaluminum, and H2O and were characterized systematically. High-quality polycrystalline MgO films were deposited for a substrate temperature above 500°C, and amorphous thin films were deposited around 400°C. The deposited Al2O3 and MgAl2O4 thin films were characterized as amorphous in structure. Applicability of ALD to complex oxides is discussed.

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Authors and Affiliations

  1. Department of Material Science and Engineering, McMaster University, L8S 4M1, Hamilton, Ontario, Canada

    Ron Huang

  2. Department of Engineering Physics and Material Science and Engineering, McMaster Uiniversity, L8S 4M1, Hamilton, Ontario, Canada

    Adrian H. Kitai

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  1. Ron Huang
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  2. Adrian H. Kitai
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Huang, R., Kitai, A.H. Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition. J. Electron. Mater. 22, 215–220 (1993). https://doi.org/10.1007/BF02665029

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  • DOI: https://doi.org/10.1007/BF02665029

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