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Small area deposition of Ge on Ge or GaAs substrates via the disproportionation of GeI2

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Abstract

The low temperature GeI2 disproportionation reaction was used to grow epitaxial germanium at 350°C selectively in small areas on germanium and GaAs substrates. Germanium deposition rates on masked surfaces were as much as 80 times greater than those observed on unmasked surfaces under the same growth conditions. Enhanced growth rates were more pronounced on (110) surfaces compared to (111) surfaces. Extremely fine line epitaxial structures (0.5 ώm) were obtained which were exceptionally free of spurious overgrowths on the oxide masks.

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Authors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.

    M. Berkenblit (Staff Member, Exploratory Technology) & A. Reisman (Manager, Exploratory Technology)

Authors
  1. M. Berkenblit
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  2. A. Reisman
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Additional information

This manuscript is based on a paper presented at the annual conference sponsored by the Electronic Materials Committee of the Institute of Metals Division of the Metallurgical Society of AIME and held August 30–September 2, 1970, in New York City.

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Berkenblit, M., Reisman, A. Small area deposition of Ge on Ge or GaAs substrates via the disproportionation of GeI2 . Metall Trans 2, 803–808 (1971). https://doi.org/10.1007/BF02662739

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  • DOI: https://doi.org/10.1007/BF02662739

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