Abstract
We report cathodoluminescence measurements which show the effects of Zn-vapor or Te-vapor heat tretments on the edge emission and deep-center luminescence of vapor-phase-grown ZnTe. Prior to heat treatment, the 80 K luminescence of our as-grown material showed strong edge emission near 2.36 eV and weaker deep-center luminescence bands near 1.87 and 1.59 eV. The Te-vapor heat treatments induced a new luminescence band near 2.08 eV. The 1.59 eV band was enhanced by heat treatment in Te vapor and weakened by heat treatment in Zn vapor; this supports our earlier attribution of this band to a Vzn-related complex. In contrast, the initially weak red band near 1.87 eV was strongly enhanced by heat treatment, whether in either Zn vapor or Te vapor, followed by more rapid cooling than accorded the as-grown crystal. We thus conclude that the red band does not originate from a native-defect-related complex. The red luminescence is efficient and dominates the ZnTe spectrum from liquid nitrogen to room temperature. The electron-beam-current dependence, temperature dependence, and frequency-domain kinetics of the red band are reported following both Zn-vapor and Tevapor heat treatment. The red luminescence is attributed to recombination at isoelectronic 0 centers, the 0 being redistributed from precipitates to Te sublattice sites by the heat treatment and subsequent rapid cooling.
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This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract #DE-AC04-76DP00789.
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Norris, C.B., Hjalmarson, H.P. The effects of Zn-vapor or Te-vapor heat treatment on the luminescence of ZnTe. J. Electron. Mater. 15, 331–337 (1986). https://doi.org/10.1007/BF02661881
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DOI: https://doi.org/10.1007/BF02661881