Abstract
A new technique is described for determining the density and centroid of trapped space charge in the oxide layer of metal-oxide-semiconductor (MOS) structures. Photo-current-voltage (photo I-V) characteristics for both the metal-oxide and Si-oxide interfaces are used to determine the internal fields due to bulk trapped charge, and hence its density and centroid. Experimental examples for locating both positive and negative charge are presented. For negative charge, an Al-Si02-W-SiO2-Si structure (MOWOS) with a layer of approximately 1014 W atoms/cm2 deposited 80 Å from the Si-SiO2 interface and charged by electronic internal photoemission is investigated. For positive charge, the location of trapped holes generated by 16.85 eV photons or x-rays in the SiO2 layer of an MOS structure under a voltage bias is discussed. The photo I-V technique is compared to others in terms of its direct, rapid, minimally perturbing, low current, and low field characteristics.
Similar content being viewed by others
References
R. J. Powell and C. N. Berglund, J. Appl. Phys. 42, 4390 (1971).
D. J. DiMaria, J. Appl. Phys. 47, 4073 (1976).
D. J. DiMaria, J. Appl. Phys. 45, 5454 (1974).
Z. A. Weinberg, Appl. Phys. Lett. 27, 437 (1975).
R. J. Powell and G. F. Derbenwick, IEEE Trans. Nuc. Sci. NS-18, 99 (1971).
D. J. DiMaria, Z. A. Weinberg, and J. M. Aitken, J. Appl. Phys. (Mar., 1977).
A. S. Grove and E. H. Snow, Proc. IEEE Letters,54, 894 (1966).
R. J. Powell and G. W. Hughes, Annual Report, 31 - Jan. - 1975, Office of Naval Research, Contract No. N00014-74-C-0185 (unpublished).
D. J. DiMaria and F. J. Feigl, Phys. Rev. B 9, (4) 1874 (1974).
B. H. Yun, Appl. Phys. Lett. 25, 340 (1974).
P. C. Arnett and B. H. Yun, Appl. Phys. Lett. 26, 94 (1975).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
DiMaria, D.J., Weinberg, Z.A., Aitken, J.M. et al. Use of photocurrent-voltage characteristics of MOS structures to determine insulator bulk trapped charge densities and centroids. J. Electron. Mater. 6, 207–219 (1977). https://doi.org/10.1007/BF02660485
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02660485