Abstract
The mechanical behavior of crystalline silicon during small-scale indentation has been studied using a Nanoindenter. Tests were performed on bothp-type andn-type materials in the (100), (110), and (111) orientations at peak loads ranging from 0.5 to 120 mN. The indentation load-displacement curves exhibit two features which appear to be unique to silicon. First, at large peak loads, a sharp discontinuity in displacement is observed as the indenter is unloaded. Second, at small peak loads, a large, non-degenerative hysteresis is exhibited. Possible mechanistic origins for the discontinuity and hysteresis are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. B. Pethica, R. Hutchings and W. C. Oliver, Philos. Mag. A48, 593 (1983).
W. C. Oliver, R. Hutchings, and J. B. Pethica, in ASTM STP 889, eds. P. J. Blau and B. R. Lawn (ASTM, Philadelphia, PA, 1986), pp 90–108.
M. F. Doerner and W. D. Nix, J. Mater. Res.1, 601 (1986).
W. C. Oliver and C. J. McHargue, Thin Film Sol.161, 117 (1988).
G. M. Pharr and M. Nastasi, to be published.
K. L. Johnson, Contact Mechanics, Cambridge University Press, Cambridge, 1985.
D. Stone, W. R. LaFontaine, P. Alexopolous, T.-W. Wu and Che-Yu Li, J. Mater. Res.3, 141 (1988).
B. Lawn and R. Wilshaw, J. Mater. Sci.10, 1049 (1975).
M. C. Gupta and A. L. Ruoff, J. Appl. Phys. 51,1072 (1980).
S. C. Duclos, Y. K. Vohra and A. L. Ruoff, Phys. Rev. Lett. 58, 775 (1987).
H. Olijnyk, S. K. Sikka and W. B. Holzapfel, Phys. Lett.103A, 137 (1984).
H. Minomura and H. G. Drickamer, J. Phys. Chem Solids23, 451 (1962).
J. Z. Hu, L. D. Merkle, C. S. Menoni and I. L. Spain, Phys. Rev. B34, 4679 (1986).
I. V. Gridneva, Yu. V. Milman and V. I. Trefilov, Phys. Status Solidi (a)14, 177 (1972).
A. P. Gerk and D. Tabor, Nature271, 732 (1978).
Steven Danyluk, Dae Soon Kim and Juris Kalejs, J. Mater. Sci. Lett.4, 1135 (1985).
D. R. Clarke, M. C. Kroll, P. D. Kirchner, R. F. Cook and B. J. Hockey, Phys. Rev. Lett.21, 2156 (1988).
O. Mishima, L. D. Calvert and E. Whalley, Nature310, 393 (1984).
E. Whalley, Physica139 &140B, 314 (1986).
Y. Paul, O. Mishima and E. Whalley, J. Chem. Phys.84, 2766 (1986).
M. A. Floriano, E. Whalley, E. C. Svensson and V. F. Sears, Phys. Rev. Lett.57, 3062 (1986).
J. S. Tse and M. L. Klein, Phys Rev. Lett.58, 1672 (1987).
J. Maddox, Nature326, 823 (1987).
B. R. Lawn and M. V. Swain, J. Mater. Sci.10, 113 (1975).
G. M. Pharr, W. C. Oliver and R. F. Cook, in Proc. Seventh Int. Conf. on Fracture (March 1989, Houston, Texas), in press.
J. Lankford and D. L. Davidson, J. Mater. Sci.14, 1662 (1979).
J. Lankford, J. Mater. Sci.16, 1177 (1981).
T. Sata, K. Takamoto and H. Yoshikawa, Bull. Jpn. Soc. Prec. Engr.3, 13 (1969).
K. E. Puttick, M. A. Shahid and M. M. Hosseini, J. Phys. D12, 195 (1979).
J. J. Gilman, in The Science of Hardness Testing and Its Research Applications, eds. J. H. Westbrook and H. Conrad (ASM, Metals Park, OH, 1973), p. 54.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pharr, G.M., Oliver, W.C. & Clarke, D.R. The mechanical behavior of silicon during small-scale indentation. J. Electron. Mater. 19, 881–887 (1990). https://doi.org/10.1007/BF02652912
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02652912