Abstract
Some optical and electrical properties of degenerate InN films prepared by a reactive evaporation technique are presented. Thermal stability of these easily dissociated samples is discussed and evidence is presented indicating that the partial pressure of atomic nitrogen rather than diatomic nitrogen is a more fundamental parameter for describing thermal equilibrium. This has important implications for the growth of all group III-nitrides.
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References
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Trainor, J.W., Rose, K. Some properties of inn films prepared by reactive evaporation. J. Electron. Mater. 3, 821–828 (1974). https://doi.org/10.1007/BF02651400
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DOI: https://doi.org/10.1007/BF02651400