Abstract
The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260°C are presented. The layers, amorphous as grown, became crystalline after annealing. The crystallization was documented by several characterization techniques including photoreflectance, Raman spectroscopy, photoluminescence, transmission electron microscopy, and double-crystal x-ray diffraction. The n-type conductivity of the annealed films was exploited for the construction of a diode structure.
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References
F.W. Smith, A.R. Calawa, C.L. Chen, M.J. Manfra and L.J. Mahoney,IEEE Electron. Dev. Lett. 9, 77, (1988).
F.W. Smith, C.L. Chen, G.W. Turner, M.C. Fina, L.J. Mahoney, M.J. Manfra and R. Jaeger,IEEE Trans. Electron. Dev. 37, 46 (1990).
B. Tadayon, M. Fatemi, S. Tadayon, F. Moore and H. Dietrich,J. Vac. Sci. Technol. B 10, 1074 (1992).
M.E. Twigg, M. Fatemi and B. Tadayon,Appl. Phys. Lett. 63, 321 (1993).
F.H. Pollak,SPIE 276, 142 (1981).
O.J. Glembocki, J.A. Dagata, E.S. Snow and D.S. Katzer,Appl. Surf. Sci., 63, 143 (1993).
I. Ohbu, M. Takahama and K. Hiruma,Appl. Phys. Lett. 61, 1679, (1992).
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Giordana, A., Glembocki, O.J., Glaser, E.R. et al. Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase. J. Electron. Mater. 22, 1391–1393 (1993). https://doi.org/10.1007/BF02649983
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DOI: https://doi.org/10.1007/BF02649983