Abstract
The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition.
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Bohnert, K., Anselment, M., Kobbe, G. et al. Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors. Z. Physik B - Condensed Matter 42, 1–11 (1981). https://doi.org/10.1007/BF01298286
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DOI: https://doi.org/10.1007/BF01298286