Abstract
The oxidation behavior of HfC, HfC-25 wt. % TaC, and HfC-7 wt.% PrC2 has been studied between 1200–2200° C. Parabolic growth of the oxide layer has been observed for both HfC and HfC-TaC over the entire temperature range. A break in the temperature dependence of the oxidation kinetics occurs around 1600°C. At lower temperatures, the kinetics are limited by gaseous diffusion via pores in the oxide. Above 1800°C, gaseous diffusion through pores becomes less important as scale-growth kinetics are dominated by bulk (ambipolar) diffusion of oxygen and electrons through the oxide.
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Courtright, E.L., Prater, J.T., Holcomb, G.R. et al. Oxidation of hafnium carbide and hafnium carbide with additions of tantalum and praseodymium. Oxid Met 36, 423–437 (1991). https://doi.org/10.1007/BF01151590
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DOI: https://doi.org/10.1007/BF01151590