Preparation of SiC ultrafine particles from SiH₂Cl₂ and C₂H₄ gas mixtures by a CO₂ laser

Abstract

Preparation of SiC ultrafine particles from SiH₂Cl₂-C₂H₄ mixtures by a CO₂ laser was investigated. The powders with specific surface area in the 8–150 m² g⁻¹ range were obtained by irradiating SiH₂Cl₂-C₂H₄ gas mixtures with a CO₂ laser at atmospheric pressure. X-ray diffraction of the products showed that silicon, SiC and free carbon were produced and the composition of the powders depended on the C₂H₄/SiH₂Cl₂ ratio. The reaction flame temperature changed from less than 1273 K to more than 3073 K with the laser power density and C₂H₄/SiH₂Cl₂ ratio. When SiH₂Cl₂ was irradiated with the CO₂ laser, the reaction temperature was less than 1273 K and silicon particles were formed. When the SiH₂Cl₂-C₂H₄ mixture was irradiated with a CO₂ laser, the reaction temperature was low (<1273 K) at low power density and low C₂H₄/SiH₂Cl₂ ratio, but it increased rapidly to around 3000 K at high laser power density and high C₂H₄/SiH₂Cl₂ ratio (>0.3). SiC was formed at both high and low reaction flame temperatures. It was considered that the rapid increase in the reaction flame temperature was caused by the initiation of exothermic reactions and the increase in laser absorption which was caused mainly by carbon particle formation. Hysteresis was observed between the reaction flame temperature and the power density of the laser beam. It was found that SiH₂Cl₂ underwent a disproportionation reaction on irradiation with the CO₂ laser, and silicon and SiC particles were formed through the various products of the disproportionation reaction. In particular, at low reaction flame temperature, the reactive species, such as SiH₄ and SiH₃Cl, produced by the disproportionation of SiH₂Cl₂ were considered to play an important role in the formation of silicon and SiC particles.