Abstract
Ambipolar diffusion gives rise to four distinct types of diffusion creep in ceramic materials, depending on whether the processes of lattice and grain-boundary diffusion creep are controlled by the anions or cations, respectively. These four processes are incorporated in a deformation mechanism map for diffusion creep in pure Al2O3, using a new form of map which is independent of the selected stress level. This map may be used to determine the rate-controlling mechanism for diffusion creep under any selected experimental conditions. By superimposing dislocation creep on to the map, it is possible to estimate the highest permissible stress and the lowest feasible temperature for experimental observation of any of the diffusion creep processes.
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Langdon, T.G., Mohamed, F.A. The incorporation of ambipolar diffusion in deformation mechanism maps for ceramics. J Mater Sci 13, 473–482 (1978). https://doi.org/10.1007/BF00541795
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DOI: https://doi.org/10.1007/BF00541795