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Laser-induced defect formation in semiconductors

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Abstract

The electron-deformation-thermal theory of pulsed laser-induced point defect generation in strongly absorbing semiconductors is developed. The theoretical results obtained are in a good agreement with the results of experiments carried out in Ge, GaAs, and GaP.

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Authors and Affiliations

  1. International Laser Center, Moscow State University, Leninskie Gory, 117234, Moscow, Russia

    V. I. Emel'yanov

  2. Department of Physics, Moscow State University, Leninskie Gory, 117234, Moscow, Russia

    P. K. Kashkarov

Authors
  1. V. I. Emel'yanov
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  2. P. K. Kashkarov
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Emel'yanov, V.I., Kashkarov, P.K. Laser-induced defect formation in semiconductors. Appl. Phys. A 55, 161–166 (1992). https://doi.org/10.1007/BF00334217

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  • DOI: https://doi.org/10.1007/BF00334217

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