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Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the 〈100〉 and the 〈110〉 projection

  • High-Resolution Electron Microscopy Of Semiconductor Interfaces
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Abstract

The interface microstructure of AlAs/GaAs quantum wells grown by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). High-resolution transmission electron microscopy (HRTEM) yields information about the width of the chemical transition between the binary components and about the lateral step distances along the interface. The chemical composition is quantitatively determined by the application of a pattern recognition procedure based on the Fourier transformation of image unit cells. Along the 〈100〉 zone axis the composition across the interfaces is obtained with a precision of ±10 atomic percent and with a spatial resolution of 0.28 nm. Despite a lower chemical sensitivity a quantitative chemical analysis was also carried out for images along the 〈110〉 projection.

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  1. Forschungszentrum Jülich GmbH, Institut für Festkörperforschung, Postfach 1913, D-52425, Jülich, Germany

    T. Walther & D. Gerthsen

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  1. T. Walther
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  2. D. Gerthsen
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Walther, T., Gerthsen, D. Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the 〈100〉 and the 〈110〉 projection. Appl. Phys. A 57, 393–400 (1993). https://doi.org/10.1007/BF00331777

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  • DOI: https://doi.org/10.1007/BF00331777

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