Abstract
Experimental results are presented on the Si damage induced by a copper-vapor laser beam under a layer of chemically neutral liquid (H2O, DMFA, DMSO). The lateral dimensions of the damaged area coincide with those of laser beam, while the depth of the damaged area increases with time. The rate of hole formation may be as high as 75 μm/s. The qualitative interpretation of the results is given on the basis of laser generation of vacancies, and their combination and redistribution in the field of the inhomogeneous mechanical strains due to multiple heating/cooling cycles of the surface of the semiconductor.
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